Crystal growth using low temperature gradient sublimation

Numerical simulation of temperature fields during the sublimation growth of SiC single crystals, using WIAS-HiTNIHS

We present numerical computations of the temperature fields in axisymmetric growth apparatus for sublimation growth of silicon carbide (SiC) bulk single crystals by physical vapor transport (PVT) (modified Lely method). The results are computed using our software WIAS-HiTNIHS, the WIAS High Temperature Numerical Induction Heating Simulator; pronunciation: hit-nice, by solving the energy balance...

Introduction to Crystal Growth Methods with Emphasis on Low Temperature Solution Growth Technique

Crystal Temperature Control in the Czochralski Crystal Growth Process

This work proposes a control configuration and a nonlinear multivariable model-based feedback controller for the reduction of thermal gradients inside the crystal in the Czochralski crystal growth process after the crystal radius has reached its final value. Initially, a mathematical model which describes the evolution of the temperature inside the crystal in the radial and axial directions and...

The Effects of ACRT on the Growth of ZnTe Crystal by the Temperature Gradient Solution Growth Technique

A finite element method is used here to simulate the temperature field, the thermosolutal convection, the solute segregation, and the non-isothermal phase transformation during the growth of ZnTe crystal via the temperature gradient solution growth technique (TGSG) with an accelerated crucible rotation technique (ACRT). Three different trapezoid-wave ACRT sequences are proposed, and their effec...

Temperature Tunability of Dielectric/ Liquid Crystal / Dielectric Photonic Crystal Structures

Recently, photonic crystals doped with liquid crystal (LC) material havegained much research interest. In this article new ternary one-dimensional photoniccrystal introduced and studied. The liquid crystal layer of 5CB and 5PCH is sandwichedby two dielectric layers. For the first time, we use four structures SiO2/UCF35/CaF2,SiO2/5CB/CaF2, NFK51/UCF35/NPSK53 and NFK51/5CB/NPSK53. The effect ofte...